DIFFUSION-PROFILE MEASUREMENT IN INP WITH SCHOTTKY DIODES

[1] CARRIER DENSITY PROFILES IN ZN-DIFFUSED AND CD-DIFFUSED INP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L197 - L200

[2] SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM-PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1981, 24 (01) : 57 - &

[3] FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 924 - 926

[4] CLAWSON AR, 1978, 592 NAV OC SYST CTR

[5] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &

[6] HILDEBRAND O, 1982, PHYS STAT SOL A, V72

[7] HILIBRAND J, 1960, RCA REV, V21, P245

[8] KUNDUKHOV RM, 1967, SOV PHYS SEMICOND+, V1, P765

[9] DIFFUSION PROFILES OF ZINC IN INDIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) : 1806 - 1821

[10] YEH TH, 1973, ATOMIC DIFFUSION SEM, P209

[1] CARRIER DENSITY PROFILES IN ZN-DIFFUSED AND CD-DIFFUSED INP [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (03) : L197 - L200

[2] SHALLOW AND SELECTIVE DIFFUSION OF ZINC IN INDIUM-PHOSPHIDE [J]. SOLID-STATE ELECTRONICS, 1981, 24 (01) : 57 - &

[3] FORMATION OF P+-P--N- JUNCTIONS IN INP BY CD DIFFUSION [J]. APPLIED PHYSICS LETTERS, 1980, 36 (11) : 924 - 926

[4] CLAWSON AR, 1978, 592 NAV OC SYST CTR

[5] DEPLETION CAPACITANCE AND DIFFUSION POTENTIAL OF GALLIUM PHOSPHIDE SCHOTTKY-BARRIER DIODES [J]. JOURNAL OF APPLIED PHYSICS, 1966, 37 (08) : 3024 - &

[6] HILDEBRAND O, 1982, PHYS STAT SOL A, V72

[7] HILIBRAND J, 1960, RCA REV, V21, P245

[8] KUNDUKHOV RM, 1967, SOV PHYS SEMICOND+, V1, P765

[9] DIFFUSION PROFILES OF ZINC IN INDIUM-PHOSPHIDE [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (15) : 1806 - 1821

[10] YEH TH, 1973, ATOMIC DIFFUSION SEM, P209