A DISLOCATION MODEL RELATING APPARENT CHARGE-DENSITY TO LATTICE MISMATCH IN EPITAXIAL INGAAS/INP

被引：4

作者：

HUTSON, AR

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来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 03期

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D O I：

10.1063/1.337394

中图分类号：

O59 [应用物理学];

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页码：1038 / 1041

页数：4

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[1] DISLOCATION MORPHOLOGY IN GRADED HETEROJUNCTIONS - GAAS1-XPX
ABRAHAMS, MS
WEISBERG, LR
BUIOCCHI, CJ
BLANC, J
[J]. JOURNAL OF MATERIALS SCIENCE, 1969, 4 (03) : 223 - &
[2] BANK R, UNPUB
[3] ONE-DIMENSIONAL DISLOCATIONS .2. MISFITTING MONOLAYERS AND ORIENTED OVERGROWTH
FRANK, FC
VANDERMERWE, JH
[J]. PROCEEDINGS OF THE ROYAL SOCIETY OF LONDON SERIES A-MATHEMATICAL AND PHYSICAL SCIENCES, 1949, 198 (1053): : 216 - 225
[4] HUTSON AR, UNPUB
[5] HUTSON AR, 1984, 13TH P INT C DEF SEM, P367
[6] CORRELATION BETWEEN BACKGROUND CARRIER CONCENTRATION AND X-RAY LINEWIDTH FOR INGAAS/INP GROWN BY VAPOR-PHASE EPITAXY
MACRANDER, AT
CHU, SNG
STREGE, KE
BLOEMEKE, AF
JOHNSTON, WD
[J]. APPLIED PHYSICS LETTERS, 1984, 44 (06) : 615 - 617
[7] FEEDBACK METHOD FOR INVESTIGATING CARRIER DISTRIBUTIONS IN SEMICONDUCTORS
MILLER, GL
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (10) : 1103 - &
[8] FERMI-LEVEL PINNING BY MISFIT DISLOCATIONS AT GAAS INTERFACES
WOODALL, JM
PETTIT, GD
JACKSON, TN
LANZA, C
KAVANAGH, KL
MAYER, JW
[J]. PHYSICAL REVIEW LETTERS, 1983, 51 (19) : 1783 - 1786