SURFACE MOBILITY FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：58

作者：

SURYA, C

HSIANG, TY

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.35.6343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

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页码：6343 / 6347

页数：5

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