SURFACE MOBILITY FLUCTUATIONS IN METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS

被引：58

作者：

SURYA, C

HSIANG, TY

机构：

来源：

PHYSICAL REVIEW B | 1987年 / 35卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.35.6343

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：6343 / 6347

页数：5

共 28 条

[11] SINGLE ELECTRON SWITCHING EVENTS IN NANOMETER-SCALE SI MOSFETS [J].

HOWARD, RE ;

SKOCPOL, WJ ;

JACKEL, LD ;

MANKIEWICH, PM ;

FETTER, LA ;

TENNANT, DM ;

EPWORTH, R ;

RALLS, KS .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (09) :1669-1674

[12] SURFACE STATE RELATED 1/F NOISE IN MOS TRANSISTORS [J].

HSU, ST .

SOLID-STATE ELECTRONICS, 1970, 13 (11) :1451-+

[13] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[14] THEORY OF SCATTERING OF ELECTRONS IN A "NONDEGENERATE-SEMICONDUCTOR-SURFACE INVERSION LAYER BY SURFACE-OXIDE CHARGES [J].

NING, TH ;

SAH, CT .

PHYSICAL REVIEW B, 1972, 6 (12) :4605-4613

[15]

PAWLIKIEWICZ A, 1985, IEEE ELECTR DEVICE L, V6, P497

[16] DISCRETE RESISTANCE SWITCHING IN SUBMICROMETER SILICON INVERSION-LAYERS - INDIVIDUAL INTERFACE TRAPS AND LOW-FREQUENCY (1-F QUESTIONABLE) NOISE [J].

RALLS, KS ;

SKOCPOL, WJ ;

JACKEL, LD ;

HOWARD, RE ;

FETTER, LA ;

EPWORTH, RW ;

TENNANT, DM .

PHYSICAL REVIEW LETTERS, 1984, 52 (03) :228-231

[17] SCATTERING OF ELECTRONS BY SURFACE OXIDE CHARGES AND BY LATTICE-VIBRATIONS AT SILICON-SILICON DIOXIDE INTERFACE [J].

SAH, CT ;

TSCHOPP, LL ;

NING, TH .

SURFACE SCIENCE, 1972, 32 (03) :561-&

[18] STUDIES OF ELECTRON SCREENING EFFECTS ON ELECTRON-MOBILITY IN SILICON SURFACE INVERSION LAYERS [J].

SHIUE, CC ;

SAH, CT .

SURFACE SCIENCE, 1976, 58 (01) :153-161

[19] PROPERTIES OF ELECTRONS IN SEMICONDUCTOR INVERSION LAYERS WITH MANY OCCUPIED ELECTRIC SUBBANDS .1. SCREENING AND IMPURITY SCATTERING [J].

SIGGIA, ED ;

KWOK, PC .

PHYSICAL REVIEW B, 1970, 2 (04) :1024-&

[20]

SMITH RA, 1978, SEMICONDUCTORS, pCH5

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