DLTS STUDY OF THE INFLUENCE OF PLASTIC-DEFORMATION ON DEEP LEVELS IN N-TYPE CDTE

被引：19

作者：

GELSDORF, F ^{[1
]}

SCHROTER, W ^{[1
]}

机构：

[1] UNIV GOTTINGEN,INST PHYS 2,D-3400 GOTTINGEN,FED REP GER

来源：

PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES | 1984年 / 49卷 / 05期

关键词：

D O I：

10.1080/01418618408233301

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L35 / L41

页数：7

共 17 条

[1]

ALBERS M, 1975, THESIS GOTTINGEN

[2] DEFORMATION-INDUCED POINT-DEFECTS IN GERMANIUM [J].

BAUMANN, FH ;

SCHROTER, W .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 48 (01) :55-61

[3] DIFFERENT ELECTRICAL EFFECTS OF DISLOCATIONS IN GE, DEPENDING ON DEFORMATION TEMPERATURE [J].

CAVALLINI, A ;

GONDI, P .

LETTERE AL NUOVO CIMENTO, 1974, 10 (03) :115-119

[4] CRYSTALLOGRAPHIC POLARITY AND ETCHING OF CADMIUM TELLURIDE [J].

FEWSTER, PF ;

WHIFFIN, PAC .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (08) :4668-4670

[5]

FIGIELSKY T, 1983, J PHYS PARIS, V9, P353

[6] DEFECT STATES ASSOCIATED WITH DISLOCATIONS IN SILICON [J].

KIMERLING, LC ;

PATEL, JR .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :73-75

[7]

KVEDER WV, 1982, PHYS STAT SOL A, V72, P701

[8] CHARACTERISTICS OF THE ENERGY-LEVELS OF DISLOCATIONS IN SILICON [J].

LEMKE, H .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (01) :389-401

[9] STUDY OF ELECTRON TRAPS IN VAPOR-PHASE EPITAXIAL GAAS [J].

MIRCEA, A ;

MITONNEAU, A .

APPLIED PHYSICS, 1975, 8 (01) :15-21

[10] OBSERVATION OF DISLOCATIONS IN CADMIUM TELLURIDE BY CATHODOLUMINESCENCE MICROSCOPY [J].

NAKAGAWA, K ;

MAEDA, K ;

TAKEUCHI, S .

APPLIED PHYSICS LETTERS, 1979, 34 (09) :574-575

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