OPTICAL BAND-GAP OF THIN-FILMS OF SNSE-SNSE2 EUTECTIC ALLOY

被引：15

作者：

SIDDIQUI, SS

DESAI, CF

机构：

[1] Physics Department, Faculty of Science, Maharaja Sayajirao University of Baroda, Baroda

来源：

THIN SOLID FILMS | 1994年 / 239卷 / 01期

关键词：

D O I：

10.1016/0040-6090(94)90125-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

SnSe and SnSe2 are known p-type and n-type semiconductors respectively. Following an earlier report on the lamellae-structured SnSe-SnSe2 eutectic alloy, thin films of this alloy have been prepared. The films exhibit p-type conductivity. From the optical absorptance data, their band gaps have been evaluated and studied as functions of the film thickness and deposition temperature. The data indicate absorptance through indirect intraband transition with a band gap around 1.1eV. The detailed results are reported.

引用

页码：166 / 168

页数：3

共 14 条

[1] SNSE-SNSE2 EUTECTIC . A P-N MULTILAYER STRUCTURE [J].