SEMICONDUCTING BEHAVIOR OF AG2TE THIN-FILMS AND THE DEPENDENCE OF BAND-GAP ON THICKNESS

被引：28

作者：

DAS, VD

KARUNAKARAN, D

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1983年 / 54卷 / 09期

关键词：

D O I：

10.1063/1.332753

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：5252 / 5255

页数：4

共 24 条

[1]

APPEL J, 1955, Z NATURFORSCH PT A, V10, P530

[2]

BOTTGER O, 1962, ANN PHYSIK, V9, P367

[3]

Chopra K.L, 1969, THIN FILM PHENOMENA

[4] ENERGY GAP IN BETA-AG2TE [J].

DALVEN, R ;

GILL, R .

PHYSICAL REVIEW, 1966, 143 (02) :666-&

[5] SEMICONDUCTING BEHAVIOR IN ANTIMONY-DOPED BISMUTH-FILMS [J].

DAS, VD ;

JAGADEESH, MS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1981, 19 (01) :89-92

[6] VARIATION OF ENERGY-GAP AND RESISTIVITY MINIMUM POSITION WITH THICKNESS IN BISMUTH THIN-FILMS [J].

DAS, VD ;

VAIDEHI, S .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 71 (02) :351-356

[7]

DAS VD, 1981, VACUUM, V31, P133, DOI 10.1016/0042-207X(81)90002-6

[8] BAND-GAP AND INTERGRAIN BARRIER ACTIVATION-ENERGIES IN BI90SB10 THIN-FILMS [J].

DAS, VD ;

JAGADEESH, MS .

MATERIALS RESEARCH BULLETIN, 1981, 16 (12) :1547-1555

[9]

DAS VD, 1981, J MATER SCI, V16, P3484

[10] GROWTH OF VAPOUR PHASE DEPOSITS OF AG2SE AND AG2TE ON SINGLE CRYSTALS [J].

DHERE, NG ;

GOSWAMI, A .

THIN SOLID FILMS, 1970, 5 (03) :137-&

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