TECHNIQUES FOR THE FABRICATION OF LITHIUM DRIFTED GERMANIUM GAMMA DETECTORS

被引:25
作者
HANSEN, WL
JARRETT, BV
机构
来源
NUCLEAR INSTRUMENTS & METHODS | 1964年 / 31卷 / 02期
关键词
D O I
10.1016/0029-554X(64)90174-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:301 / 306
页数:6
相关论文
共 13 条
[1]  
CARTER JR, 1960, J APPL PHYS, V31, P7
[2]  
EWAN GT, 1964, NUCL INSTR METH, V26, P1
[3]  
GOULDING FS, 1964, 9TH P SEM SCINT COUN
[4]   ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].
MORIN, FJ ;
MAITA, JP .
PHYSICAL REVIEW, 1954, 96 (01) :28-35
[5]   CHEMICAL INTERACTIONS AMONG DEFECTS IN GERMANIUM AND SILICON [J].
REISS, H ;
FULLER, CS ;
MORIN, FJ .
BELL SYSTEM TECHNICAL JOURNAL, 1956, 35 (03) :535-636
[6]  
SHIRLEY DA, 1964, B AM PHY SOC, V9, P435
[7]  
SHIRLEY DA, 1964, B AM PHY SOC, V9, P498
[8]  
SHIRLEY DA, 1964, B AM PHY SOC, V9, P486
[9]  
WEBB PP, 1963, NUCL INSTR METH, V22, P2
[10]   RECTIFICATION PROPERTIES OF METAL-SILICON CONTACTS [J].
WURST, EC ;
BORNEMAN, EH .
JOURNAL OF APPLIED PHYSICS, 1957, 28 (02) :235-240