MEASUREMENTS OF THE QUANTIZED HALL RESISTANCE AT ETL

被引：8

作者：

KINOSHITA, J

NISHINAKA, H

SEGAWA, K

VANDEGRIFT, CT

ENDO, T

机构：

[1] Electrotechnical Laboratory (ETL), Tsukuba, Ibaraki

[2] National Institute of Standards and Technology (NIST), Gaithersburg, MD

来源：

IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT | 1991年 / 40卷 / 02期

关键词：

D O I：

10.1109/TIM.1990.1032930

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The quantized Hall resistance R(H) (4) for Si-MOSFET's and a GaAs heterostructure device has been measured in terms of OMEGA-ETL by use of a newly constructed measurement system at the Electrotechnical Laboratory. The result is R(H) (4) = 6453.1992 +/- 0.0002 OMEGA-ETL = 6453.20175 (1 - 0.40 x 10(-6) +/- 0.03 x 10(-6)) OMEGA-ETL on January 1, 1990.

引用

收藏

页码：249 / 252

页数：4

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