DAMAGE ACCUMULATION IN CERAMICS DURING ION-IMPLANTATION

[1] ATOMIC DISPLACEMENT AND IONIZATION EFFECTS ON OPTICAL-ABSORPTION AND STRUCTURAL-PROPERTIES OF ION-IMPLANTED AL2O3 [J]. APPLIED PHYSICS LETTERS, 1974, 25 (10) : 540 - 542

[2] CHANGING THE SURFACE MECHANICAL-PROPERTIES OF SILICON AND ALPHA-AL2O3 BY ION-IMPLANTATION [J]. JOURNAL OF MATERIALS SCIENCE, 1984, 19 (11) : 3524 - 3545

[3] CAMPBELL AB, 1973, SILICON CARBIDE 1973, P486

[4] CHOYKE WJ, 1974, PHYS REV B, V10, P2554, DOI 10.1103/PhysRevB.10.2554

[5] CLINARD FW, UNPUB RAD EFFECTS CR

[6] DEFECTS AND DEFECT PROCESSES IN IONIC OXIDES - WHERE DO WE STAND TODAY [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 159 - 165

[7] LATTICE DISORDER IN IMPLANTED INSULATORS - PB IMPLANTATION IN ALPHA-AL2O3 [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (03): : 161 - 171

[8] EVANS BD, 1976, ION IMPLANTATION SEM, P265

[9] FARLOW GC, UNPUB J MATER RES

[10] RAMAN SCATTERING IN 6H SIC [J]. PHYSICAL REVIEW, 1968, 170 (03): : 698 - &

[1] ATOMIC DISPLACEMENT AND IONIZATION EFFECTS ON OPTICAL-ABSORPTION AND STRUCTURAL-PROPERTIES OF ION-IMPLANTED AL2O3 [J]. APPLIED PHYSICS LETTERS, 1974, 25 (10) : 540 - 542

[2] CHANGING THE SURFACE MECHANICAL-PROPERTIES OF SILICON AND ALPHA-AL2O3 BY ION-IMPLANTATION [J]. JOURNAL OF MATERIALS SCIENCE, 1984, 19 (11) : 3524 - 3545

[3] CAMPBELL AB, 1973, SILICON CARBIDE 1973, P486

[4] CHOYKE WJ, 1974, PHYS REV B, V10, P2554, DOI 10.1103/PhysRevB.10.2554

[5] CLINARD FW, UNPUB RAD EFFECTS CR

[6] DEFECTS AND DEFECT PROCESSES IN IONIC OXIDES - WHERE DO WE STAND TODAY [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1984, 1 (2-3) : 159 - 165

[7] LATTICE DISORDER IN IMPLANTED INSULATORS - PB IMPLANTATION IN ALPHA-AL2O3 [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1977, 33 (03): : 161 - 171

[8] EVANS BD, 1976, ION IMPLANTATION SEM, P265

[9] FARLOW GC, UNPUB J MATER RES

[10] RAMAN SCATTERING IN 6H SIC [J]. PHYSICAL REVIEW, 1968, 170 (03): : 698 - &