PERTURBATIVE INTERPRETATION OF THE HETEROJUNCTION BAND-OFFSET PROBLEM

被引：9

作者：

KANE, EO

机构：

来源：

PHYSICAL REVIEW B | 1986年 / 33卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.33.4428

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4428 / 4431

页数：4

共 11 条

[1] SURFACE STATES AND RECTIFICATION AT A METAL SEMI-CONDUCTOR CONTACT [J].

BARDEEN, J .

PHYSICAL REVIEW, 1947, 71 (10) :717-727

[2] THEORY OF SURFACE STATES [J].

HEINE, V .

PHYSICAL REVIEW, 1965, 138 (6A) :1689-&

[3] FUNDAMENTAL TRANSITION IN ELECTRONIC NATURE OF SOLIDS [J].

KURTIN, S ;

MCGILL, TC ;

MEAD, CA .

PHYSICAL REVIEW LETTERS, 1969, 22 (26) :1433-+

[4] ELECTRONIC-STRUCTURE OF A METAL-SEMICONDUCTOR INTERFACE [J].

LOUIE, SG ;

COHEN, ML .

PHYSICAL REVIEW B, 1976, 13 (06) :2461-2469

[5] PARABOLIC QUANTUM WELLS WITH THE GAAS-ALXGA1-XAS SYSTEM [J].

MILLER, RC ;

GOSSARD, AC ;

KLEINMAN, DA ;

MUNTEANU, O .

PHYSICAL REVIEW B, 1984, 29 (06) :3740-3743

[6] CHEMICAL TRENDS IN METAL-SEMICONDUCTOR BARRIER HEIGHTS [J].

SCHLUTER, M .

PHYSICAL REVIEW B, 1978, 17 (12) :5044-5047

[7] THEORETICAL-MODELS OF SCHOTTKY BARRIERS [J].

SCHLUTER, M .

THIN SOLID FILMS, 1982, 93 (1-2) :3-19

[8] UNIFIED MECHANISM FOR SCHOTTKY-BARRIER FORMATION AND III-V-OXIDE INTERFACE STATES [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY ;

CHYE, P .

PHYSICAL REVIEW LETTERS, 1980, 44 (06) :420-423

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[10] SCHOTTKY-BARRIER HEIGHTS AND THE CONTINUUM OF GAP STATES [J].

TERSOFF, J .

PHYSICAL REVIEW LETTERS, 1984, 52 (06) :465-468

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