A SURFACE X-RAY-DIFFRACTION STUDY OF THE SI(111)-PB-BURIED INTERFACE

The absence of interdiffusion and chemical reaction at the Si(111)-Pb interface makes it an attractive prototypical system for studying metal-semiconductor interface formation. Of particular interest is the fact that the surface reconstruction in the early stages of growth influences the Schottky barrier height of Si(111)-Pb diodes. In this paper we present surface X-ray diffraction studies of the buried interfaces which reveal structural differences which correlate with the known electronic properties. In situ studies of the early stages of growth at 85 K are also presented.