TEMPERATURE-DEPENDENCE OF THE ELECTRON-DRIFT MOBILITY IN HYDROGENATED A-SI PREPARED BY SPUTTERING

被引：14

作者：

TIEDJE, T

MOUSTAKAS, TD

CEBULKA, JM

机构：

来源：

JOURNAL DE PHYSIQUE | 1981年 / 42卷 / NC4期

关键词：

D O I：

10.1051/jphyscol:1981431

中图分类号：

学科分类号：

摘要：

引用

页码：155 / 158

页数：4

共 13 条

[1] QUANTUM WELL MODEL OF HYDROGENATED AMORPHOUS-SILICON [J].

BRODSKY, MH .

SOLID STATE COMMUNICATIONS, 1980, 36 (01) :55-59

[2] ELECTRONIC STATES AND BONDING CONFIGURATIONS IN HYDROGENATED AMORPHOUS-SILICON [J].

CHING, WY ;

LAM, DJ ;

LIN, CC .

PHYSICAL REVIEW B, 1980, 21 (06) :2378-2387

[3] THEORY OF HYDROGENATED SILICON [J].

ECONOMOU, EN ;

PAPACONSTANTOPOULOS, DA .

PHYSICAL REVIEW B, 1981, 23 (04) :2042-2045

[4]

KIRBY PB, 1981, MAR P INT TOP C TETR

[5] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J].

MOUSTAKAS, TD ;

ANDERSON, DA ;

PAUL, W .

SOLID STATE COMMUNICATIONS, 1977, 23 (03) :155-158

[6]

MOUSTAKAS TD, 1981, MAR P INT TOP C TETR

[7] MULTIPLE-TRAPPING MODEL OF ANOMALOUS TRANSIT-TIME DISPERSION IN A-SE [J].

NOOLANDI, J .

PHYSICAL REVIEW B, 1977, 16 (10) :4466-4473

[8] DISPERSIVE (NON-GAUSSIAN) TRANSIENT TRANSPORT IN DISORDERED SOLIDS [J].

PFISTER, G ;

SCHER, H .

ADVANCES IN PHYSICS, 1978, 27 (05) :747-798

[9] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J].

TIEDJE, T ;

CEBULKA, JM ;

MOREL, DL ;

ABELES, B .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1425-1428

[10]

TIEDJE T, 1980, B AM PHYS SOC, V25, P329

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