OBSERVATION OF A METALLIC IMPURITY BAND IN N-TYPE GAAS

被引：28

作者：

ROMERO, D

LIU, S

DREW, HD

PLOOG, K

机构：

[1] LAB PHYS SCI,COLLEGE PK,MD 20740

[2] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.42.3179

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Magnetotransport and far-infrared spectroscopy are combined to probe the electronic states in the vicinity of the magnetic-field-induced metal-insulator transition in n-type GaAs. Resonant absorption lines, identified as the shallow-donor 1s-2p transitions by their selection rules, magnetic-field dependence, and temperature dependence are observed even in the metallic state. These results demonstrate that, near the metal-insulator transition, the electrons are in the donor impurity band, which is split off from the conduction band. © 1990 The American Physical Society.

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页码：3179 / 3182

页数：4

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