TRANSMISSION ELECTRON-MICROSCOPY OF SEMI-INSULATING GA AS DEFORMED AT ROOM-TEMPERATURE AND UNDER CONFINING PRESSURE

被引:35
作者
LEFEBVRE, A
FRANCOIS, P
DIPERSIO, J
机构
来源
JOURNAL DE PHYSIQUE LETTRES | 1985年 / 46卷 / 21期
关键词
D O I
10.1051/jphyslet:0198500460210102300
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
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页码:1023 / 1030
页数:8
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共 20 条
[11]  
KARMOUDA M, 1984, THESIS LILLE
[12]  
KESTELOOT R, 1981, THESIS LILLE
[13]  
LAISTER D, 1973, J MATER SCI, V8, P1539
[14]  
MILVIDSKII MG, 1965, NEORG MATER, V1, P1898
[15]   VELOCITIES AND INTERNAL-FRICTION OF DISLOCATIONS IN III-V COMPOUNDS [J].
NINOMIYA, T .
JOURNAL DE PHYSIQUE, 1979, 40 :143-145
[16]   PLASTIC-DEFORMATION OF SILICON AT LOW-TEMPERATURE AND THE INFLUENCE OF DOPING [J].
RABIER, J ;
VEYSSIERE, P ;
DEMENET, JL .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-4) :243-253
[17]  
SAZHIN NP, 1966, SOV PHYS SOLID STATE, V8, P1539
[18]   CREEP AND DISLOCATION VELOCITIES IN GALLIUM-ARSENIDE [J].
STEINHARDT, H ;
HAASEN, P .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1978, 49 (01) :93-101
[19]  
WARREN PD, 1984, PHILOS MAG A, V50, pL23
[20]   MOBILITY OF PARTIAL DISLOCATIONS IN SILICON [J].
WESSEL, K ;
ALEXANDER, H .
PHILOSOPHICAL MAGAZINE, 1977, 35 (06) :1523-1536