DETERMINATION OF THE DEPENDENCE OF THE BAND-GAP ENERGY ON COMPOSITION FOR CD1-XZNXTE

被引：58

作者：

RENO, JL

JONES, ED

机构：

[1] Sandia National Laboratories, Albuquerque

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 03期

关键词：

D O I：

10.1103/PhysRevB.45.1440

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have grown Cd1-xZnxTe layers over the entire composition range (0 less-than-or-equal-to x less-than-or-equal-to 1) by molecular-beam epitaxy on GaAs(100) substrates. The quality of the layers is good near the end points of the alloy range but decreases in the middle as expected. We have obtained a relationship for the band-gap energy at 4 K as a function of Zn concentration. This relationship exhibits significantly larger bowing than was previously thought.

引用

页码：1440 / 1442

页数：3

共 13 条

[1]

BRODIN MS, 1968, FIZ TEKH POLUPROV, V2, P727

[2] CDTE-GAAS(100) INTERFACE - MBE GROWTH, RHEED AND XPS CHARACTERIZATION [J].