GROWTH-PROCESS OF CDSE MICROCRYSTALS IN CDSE-DOPED SIO2 GLASS THIN-FILMS

被引：8

作者：

HIRAO, K

IIJIMA, S

NASU, H

机构：

[1] NEC CORP LTD,FUNDAMENTAL RES LABS,TSUKUBA,IBARAKI 305,JAPAN

[2] MIE UNIV,FAC ENGN,DEPT CHEM MAT,TSU,MIE 514,JAPAN

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1991年 / 134卷 / 03期

关键词：

D O I：

10.1016/0022-3093(91)90381-F

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Growth process of CdSe microcrystals in CdSe-doped SiO2 glass thin films by electron beam irradiation was successfully observed by a transmission electron microscope (TEM). CdSe microcrystals grew homogeneously and gradually from completely glassy state. The diameter of the microcrystals increased from 3 nm in 20 s irradiation to nearly 15 nm in 10 min irradiation. It is noted that the microcrystals of stable zinc-blend structure can bc uniformly formed by electron beam irradiation.

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页码：233 / 238

页数：6

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