UNCOOLED HIGH-SPEED INSB FIELD-EFFECT TRANSISTORS

InSb enhancement-mode, metal-insulator-semiconductor, field-effect transistors with 1 μm gate lengths have been fabricated. When operated at room temperature with less than 0.5 V applied between the source and drain, the transistors have a static dynamic range in excess of 20 dB, a cut-off frequency (fT) of 14 GHz and a transconductance, at 1 GHz, of 230 mS mm-1. Analysis of the parasitic capacitances indicates an intrinsic fT of about 90 GHz. The static electron mobility in the channel is 2×104 cm2 V-1 s-1, so a carrier velocity of about 3.7×107 cm s-1 should be attained. This leads to a predicted frequency response of 84 GHz, in reasonable agreement with the intrinsic microwave data. © 1995 American Institute of Physics.