SI(001) STEP DYNAMICS

被引：78

作者：

PEARSON, C

BOROVSKY, B

KRUEGER, M

CURTIS, R

GANZ, E

机构：

[1] Department of Physics, University of Minnesota, Minneapolis

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.74.2710

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We used a scanning tunneling microscope to study the dynamics of step edges on the Si(001)- 2×1 reconstructed surface at temperatures from 520 to 700 K. We count changes in step edge position to determine the rates of attachment and detachment events which occur in units of four Si atoms (two dimers). Surface mass transport at these temperatures is dominated by kink diffusion. From an Arrhenius plot we find the effective activation energy for kink diffusion to be 0.97±0.12 eV with a prefactor of 3×105 s-1. © 1995 The American Physical Society.

引用

页码：2710 / 2713

页数：4

共 36 条

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