SI(001) STEP DYNAMICS

被引：78

作者：

PEARSON, C

BOROVSKY, B

KRUEGER, M

CURTIS, R

GANZ, E

机构：

[1] Department of Physics, University of Minnesota, Minneapolis

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 14期

关键词：

D O I：

10.1103/PhysRevLett.74.2710

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We used a scanning tunneling microscope to study the dynamics of step edges on the Si(001)- 2×1 reconstructed surface at temperatures from 520 to 700 K. We count changes in step edge position to determine the rates of attachment and detachment events which occur in units of four Si atoms (two dimers). Surface mass transport at these temperatures is dominated by kink diffusion. From an Arrhenius plot we find the effective activation energy for kink diffusion to be 0.97±0.12 eV with a prefactor of 3×105 s-1. © 1995 The American Physical Society.

引用

页码：2710 / 2713

页数：4

共 36 条

[31] BEHAVIOR OF STEPS ON SI(001) AS A FUNCTION OF VICINALITY
SWARTZENTRUBER, BS
KITAMURA, N
LAGALLY, MG
WEBB, MB
[J]. PHYSICAL REVIEW B, 1993, 47 (20): : 13432 - 13441
[32] ADATOM-DIMER INTERACTION ON THE SI(001)-2X1 SURFACE
TOH, CP
ONG, CK
[J]. SURFACE SCIENCE, 1994, 303 (1-2) : L348 - L353
[33] EFFECTS OF AN ANOMALOUS STRAIN ACCOMMODATING BEHAVIOR OF SI AD-DIMERS ON THE NUCLEATION OF REGULAR AND DEFECT ISLANDS
TOH, CP
ONG, CK
[J]. SURFACE SCIENCE, 1994, 314 (03) : L889 - L896
[34] SCANNING TUNNELING MICROSCOPY OF CLEAN SILICON SURFACES AT ELEVATED-TEMPERATURES
TOKUMOTO, H
IWATSUKI, M
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1993, 32 (3B): : 1368 - 1378
[35] SURFACE STEPS AND SURFACE-MORPHOLOGY - UNDERSTANDING MACROSCOPIC PHENOMENA FROM ATOMIC OBSERVATIONS
WILLIAMS, ED
[J]. SURFACE SCIENCE, 1994, 299 (1-3) : 502 - 524
[36] SURFACE DYNAMICS OF MONOATOMIC STEPS ON SI(001) STUDIED WITH A HIGH-TEMPERATURE SCANNING TUNNELING MICROSCOPE
ZANDVLIET, HJW
ELSWIJK, HB
VANLOENEN, EJ
[J]. SURFACE SCIENCE, 1992, 272 (1-3) : 264 - 268

← 1 2 3 4 →