SEQUENTIAL SINGLE-PHONON EMISSION IN GAAS-ALXGA1-XAS TUNNEL-JUNCTIONS

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[2] FREEZE-OUT CHARACTERISTICS OF MOS VARACTOR [J]. APPLIED PHYSICS LETTERS, 1968, 13 (08) : 247 - &

[3] ELECTRONS AND OPTIC PHONONS IN SOLIDS - EFFECTS OF LONGITUDINAL OPTICAL LATTICE-VIBRATIONS ON ELECTRONIC EXCITATIONS OF SOLIDS [J]. REPORTS ON PROGRESS IN PHYSICS, 1973, 36 (01) : 1 - 101

[4] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 90 - 92

[5] IMPURITY CONDUCTION AND MAGNETORESISTANCE IN LIGHTLY DOPED N-TYPE GAAS [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 24 (04): : 361 - 365

[6] POINT-CONTACT SPECTROSCOPY OF ELECTRON RELAXATION MECHANISMS IN SEMICONDUCTORS [J]. PHYSICS LETTERS A, 1983, 98 (03) : 132 - 134

[7] MATVEEV GA, 1981, SOV PHYS SEMICOND+, V15, P1355

[8] MOTT NF, 1974, METAL INSULATOR TRAN, P207

[9] Nicollian E. H., 1982, MOS PHYSICS TECHNOLO, P385

[10] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 821 - 823

[1] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181

[2] FREEZE-OUT CHARACTERISTICS OF MOS VARACTOR [J]. APPLIED PHYSICS LETTERS, 1968, 13 (08) : 247 - &

[3] ELECTRONS AND OPTIC PHONONS IN SOLIDS - EFFECTS OF LONGITUDINAL OPTICAL LATTICE-VIBRATIONS ON ELECTRONIC EXCITATIONS OF SOLIDS [J]. REPORTS ON PROGRESS IN PHYSICS, 1973, 36 (01) : 1 - 101

[4] RESONANT FOWLER-NORDHEIM TUNNELING IN N-GAAS-UNDOPED ALXGA1-XAS-N+GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1984, 44 (01) : 90 - 92

[5] IMPURITY CONDUCTION AND MAGNETORESISTANCE IN LIGHTLY DOPED N-TYPE GAAS [J]. ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1976, 24 (04): : 361 - 365

[6] POINT-CONTACT SPECTROSCOPY OF ELECTRON RELAXATION MECHANISMS IN SEMICONDUCTORS [J]. PHYSICS LETTERS A, 1983, 98 (03) : 132 - 134

[7] MATVEEV GA, 1981, SOV PHYS SEMICOND+, V15, P1355

[8] MOTT NF, 1974, METAL INSULATOR TRAN, P207

[9] Nicollian E. H., 1982, MOS PHYSICS TECHNOLO, P385

[10] ELECTRICAL MEASUREMENTS ON N+-GAAS-UNDOPED GA0.6AL0.4AS-N-GAAS CAPACITORS [J]. APPLIED PHYSICS LETTERS, 1983, 42 (09) : 821 - 823