EFFECTS OF GROWTH TEMPERATURE AND [PH3] [IN(C2H5)3] ON PURITY OF EPITAXIAL INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引:5
作者
UWAI, K
MIKAMI, O
SUSA, N
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D O I
10.1049/el:19850093
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TM [电工技术]; TN [电子技术、通信技术];
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0808 ; 0809 ;
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页码:131 / 132
页数:2
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