DECODED-SOURCE SENSE AMPLIFIER FOR HIGH-DENSITY DRAMS

被引：3

作者：

OKAMURA, JI ^{[1
]}

OKADA, Y ^{[1
]}

KOYANAGI, M ^{[1
]}

TAKEUCHI, Y ^{[1
]}

YAMADA, M ^{[1
]}

SAKURAI, K ^{[1
]}

IMADA, S ^{[1
]}

SAITO, S ^{[1
]}

机构：

[1] TOSHIBA MICROELECTR CORP,KAWASAKI 210,JAPAN

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1990年 / 25卷 / 01期

关键词：

D O I：

10.1109/4.50278

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

— A new sense amplifier, called the decoded-source sense amplifier (DSSA), for high-speed, high-density DRAM’s is proposed. To prevent clamping of the common-source node of the sense amplifier caused by bit-line discharge current, the DSSA has an additional latching transistor with a gate controlled by a column decoder. The DSSA has been successfully installed in a 4-Mbit DRAM and provided a RAS access time of 60 ns under a Vccof 4 V at 85°C. © 1990 IEEE

引用

页码：18 / 23

页数：6