EXPERIMENTAL INVESTIGATION OF STOCHASTIC SPACE-CHARGE EFFECTS ON PATTERN RESOLUTION IN ION PROJECTION LITHOGRAPHY SYSTEMS

被引：17

作者：

HAMMEL, E

CHALUPKA, A

FEGERL, J

FISCHER, R

LAMMER, G

LOSCHNER, H

MALEK, L

NOWAK, R

STENGL, G

VONACH, H

WOLF, P

BRUNGER, WH

BUCHMANN, LM

TORKLER, M

CEKAN, E

FALLMANN, W

PASCHKE, F

STANGL, G

THALINGER, F

BERRY, IL

HARRIOTT, LR

FINKELSTEIN, W

HILL, RW

机构：

[1] FRAUNHOFER INST SILICON TECHNOL,D-14199 BERLIN,GERMANY

[2] VIENNA TECH UNIV,SOC ADVANCEMENTS MICROELECTR AUSTRIA,VIENNA,AUSTRIA

[3] DEPT DEF,MICROELECTR RES LAB,COLUMBIA,MD 21045

[4] AT&T BELL LABS,MURRAY HILL,NJ 07974

[5] ADV LITHOG GRP,COLUMBIA,MD 21045

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1994年 / 12卷 / 06期

关键词：

D O I：

10.1116/1.587465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：3533 / 3538

页数：6

共 18 条

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