PERFORMANCE AND APPLICATIONS OF ROOM-TEMPERATURE SILICON PASSIVATED ION-IMPLANTED X-RAY-DETECTORS

被引：3

作者：

BURGER, P ^{[1
]}

LAMPERT, MO ^{[1
]}

HENCK, R ^{[1
]}

机构：

[1] UNIV MUNICH,FACHBEREICH PHYS,D-8046 GARCHING,FED REP GER

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 01期

关键词：

D O I：

10.1109/TNS.1984.4333273

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：344 / 347

页数：4

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[2] FABRICATION OF LOW-NOISE SILICON RADIATION DETECTORS BY THE PLANAR PROCESS
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[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 169 (03): : 499 - 502
[3] KEMMER J, 1982, IEEE T NUCL SCI, V29, P733, DOI 10.1109/TNS.1982.4335947
[4] CONSIDERATIONS IN MEASURING TRACE RADIONUCLIDES IN SOIL SAMPLES BY L X-RAY DETECTION
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[J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1978, 25 (01) : 740 - 756
[5] CADMIUM TELLURIDE AND MERCURIC IODIDE GAMMA-RADIATION DETECTORS
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