SUPERLATTICE OPTICAL-CAVITY MULTIPLE-QUANTUM-WELL (SOC-MQW) LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：8

作者：

SAKAKI, H ^{[1
]}

YOSHINO, J ^{[1
]}

SEKIGUCHI, Y ^{[1
]}

SAKAI, K ^{[1
]}

机构：

[1] KOKUSAI DENSHIN DENWA CO LTD,RES & DEV LABS,MEGURO KU,TOKYO 153,JAPAN

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 08期

关键词：

D O I：

10.1049/el:19840217

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：320 / 322

页数：3

共 6 条

[1]

Gossard A. C., 1982, Molecular Beam Epitaxy and Clean Surface Techniques. Collected Papers of 2nd International Symposium, P39

[2] LOW THRESHOLD CURRENT GAAS/GAALAS GRIN-SCH STRIPE LASERS GROWN BY OMVPE [J].

KRAKOWSKI, M ;

HIRTZ, P ;

BLONDEAU, R ;

HERSEE, SD ;

BALDY, M ;

DECREMOUX, B ;

DUCHEMIN, JP .

ELECTRONICS LETTERS, 1983, 19 (25-2) :1082-1084

[3] MODAL-ANALYSIS OF SEPARATE-CONFINEMENT HETEROJUNCTION LASERS WITH INHOMOGENEOUS CLADDING LAYERS [J].

STREIFER, W ;

BURNHAM, RD ;

SCIFRES, DR .

OPTICS LETTERS, 1983, 8 (05) :283-285

[4] REFRACTIVE-INDEX OF GAAS-ALAS SUPER-LATTICE GROWN BY MBE [J].

SUZUKI, Y ;

OKAMOTO, H .

JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :397-411

[5] ULTRALOW THRESHOLD, GRADED-INDEX WAVEGUIDE, SEPARATE CONFINEMENT, CW BURIED-HETEROSTRUCTURE LASERS [J].

TSANG, WT ;

LOGAN, RA ;

DITZENBERGER, JA .

ELECTRONICS LETTERS, 1982, 18 (19) :845-847

[6] EXTREMELY LOW THRESHOLD (ALGA) AS MODIFIED MULTIQUANTUM WELL HETEROSTRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY [J].

TSANG, WT .

APPLIED PHYSICS LETTERS, 1981, 39 (10) :786-788

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