275 GHZ 3-MASK INTEGRATED GAAS SAMPLING CIRCUIT

被引：13

作者：

YU, RY ^{[1
]}

CASE, M ^{[1
]}

KAMEGAWA, M ^{[1
]}

SUNDARAM, M ^{[1
]}

RODWELL, MJW ^{[1
]}

GOSSARD, AW ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT SCI,SANTA BARBARA,CA 93106

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 13期

关键词：

Gallium arsenide; Microwave measurement; Semiconductor devices and materials;

D O I：

10.1049/el:19900619

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A monolithic GaAs diode sampling head with 275 GHz (- 3dB) bandwidth gated by a nonlinear-transmission-line (NLTL) strobe pulse generator and fabricated using three masks at 3 fixa resolution is reported. The sampling circuit step response, measured using a second NLTL as a test signal, showed a 1-9 ps (10-90%) convolved falltime and 24% peak to peak ringing. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：949 / 951

页数：3

共 9 条

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[2]

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[3]

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[4]

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[5]

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[6]

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MISHRA, UK ;

JENSEN, JF ;

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STANCHINA, WE ;

TREW, RJ ;

PIERCE, MW ;

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[8]

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[9]

RODWELL MJ, 1989, IEEE J QUANTUM ELECT, V25

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