SELF-ALIGNED A1INAS-GAINAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND CIRCUITS

被引：28

作者：

MISHRA, UK

JENSEN, JF

RENSCH, DB

BROWN, AS

STANCHINA, WE

TREW, RJ

PIERCE, MW

KARGODORIAN, TV

机构：

[1] HUGHES RES LABS, MALIBU, CA 90265 USA

[2] USA, RES OFF, DURHAM, NC USA

来源：

IEEE ELECTRON DEVICE LETTERS | 1989年 / 10卷 / 10期

关键词：

D O I：

10.1109/55.43102

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：467 / 469

页数：3

共 6 条

[1] HETEROJUNCTION BIPOLAR-TRANSISTORS FOR MICROWAVE AND MILLIMETER-WAVE INTEGRATED-CIRCUITS [J].

ASBECK, PM ;

CHANG, MF ;

WANG, KC ;

MILLER, DL ;

SULLIVAN, GJ ;

SHENG, NH ;

SOVERO, E ;

HIGGINS, JA .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (12) :2571-2579

[2] HIGH-SPEED INALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

FUKANO, H ;

KAWAMURA, Y ;

TAKANASHI, Y .

IEEE ELECTRON DEVICE LETTERS, 1988, 9 (06) :312-314

[3] NEAR-IDEAL LATERAL SCALING IN ABRUPT AL0.48IN0.52AS/IN0.53GA0.47AS HETEROSTRUCTURE BIPOLAR-TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

JALALI, B ;

NOTTENBURG, RN ;

CHEN, YK ;

LEVI, AFJ ;

SIVCO, D ;

CHO, AY ;

HUMPHREY, DA .

APPLIED PHYSICS LETTERS, 1989, 54 (23) :2333-2335

[4]

KIRK CT, 1962, IRE T ELECTRON DEV, V9, P164

[5]

TREW RJ, 1989, 1989 IEEE MTTS TECH, P897

[6] ON THE VARIATION OF JUNCTION-TRANSISTOR CURRENT-AMPLIFICATION FACTOR WITH EMITTER CURRENT [J].

WEBSTER, WM .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1954, 42 (06) :914-920

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