ELECTRONIC-STRUCTURE OF CHALCOGENIDE COMPOUNDS FROM THE SYSTEM TL2S-SB2S3 STUDIED BY XPS AND XES

被引：18

作者：

GHEORGHIU, A ^{[1
]}

LAMPRE, I ^{[1
]}

DUPONT, S ^{[1
]}

SENEMAUD, C ^{[1
]}

RAGHNI, MAE ^{[1
]}

LIPPENS, PE ^{[1
]}

OLIVIERFOURCADE, J ^{[1
]}

机构：

[1] UNIV MONTPELLIER 2,PHYSICOCHIM MAT SOLIDES LAB,CNRS,URA 407,F-34095 MONTPELLIER 05,FRANCE

来源：

JOURNAL OF ALLOYS AND COMPOUNDS | 1995年 / 228卷 / 02期

关键词：

CHALCOGENIDE COMPOUNDS; ELECTRONIC STRUCTURE; XPS; XES;

D O I：

10.1016/0925-8388(95)01663-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

X-ray photoelectron (XPS) and soft X-ray emission (XES) spectroscopies have been used as complementary methods to study the electronic structure of TI2S, Sb2S3, TISb2 and TISb3S5. XPS provides the binding energy (BE) of core levels as well as the total valence band (VB) distributions; XES probes the S 3p VB density of states. S 2p core level study shows that the charge transfer to sulphur atoms is noticeably higher in TI2S than in Sb2S3 and ternary compounds. From a comparison of XPS and XES results, we conclude that S 3p states are located near the top of the band in all cases; the results are discussed with reference to density of state calculations.

引用

页码：143 / 147

页数：5

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