PHOTOCONDUCTIVE SWITCHING IN DIAMOND UNDER HIGH BIAS FIELD

被引：13

作者：

FENG, ST ^{[1
]}

HO, PT ^{[1
]}

GOLDHAR, J ^{[1
]}

机构：

[1] UNIV MARYLAND,DEPT ELECT ENGN,COLLEGE PK,MD 20742

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1990年 / 37卷 / 12期

关键词：

D O I：

10.1109/16.64526

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Photoconductive switching was experimentally investigated in natural type IIA diamond illuminated by a KrF laser under high-bias fields (up to 1 MV/cm). High-power and high-repetition-rate capabilities of diamond switches were established. © 1990 IEEE

引用

页码：2511 / 2516

页数：6

共 17 条

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[3]

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[4]

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[6] PHOTOCONDUCTIVE SWITCHING USING POLYCRYSTALLINE ZNSE [J].

HO, PT ;

PENG, F ;

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IEEE TRANSACTIONS ON ELECTRON DEVICES, 1990, 37 (12) :2517-2519

[7] A DIAMOND OPTO-ELECTRONIC SWITCH [J].

HO, PT ;

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[8]

KANIA DR, COMMUNICATION

[9]

Lee C. H., 1984, PICOSECOND OPTOELECT

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LEE, CH .

APPLIED PHYSICS LETTERS, 1977, 30 (02) :84-86

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