AEROSOL JET ETCHING OF HG1-XCDXTE

被引:3
作者
JURCIK, BJ
BROCK, JR
TRACHTENBERG, I
机构
关键词
D O I
10.1063/1.103116
中图分类号
O59 [应用物理学];
学科分类号
摘要
Aerosol jet etching of Hg1-xCdxTe is reported using a Br2-CH3OH aerosol. The method demonstrates good anisotropy and the etching process induces no change in the electrical properties of the Hg1-xCdxTe.
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页码:1682 / 1684
页数:3
相关论文
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[11]   TUNNELING CURRENTS IN REVERSE BIASED HG1-XCDXTE PHOTODIODES [J].
NEMIROVSKY, Y ;
BLOOM, I .
INFRARED PHYSICS, 1987, 27 (03) :143-151
[12]   REACTION-KINETICS OF HG1-XCDXTE/BR2-CH3OH [J].
TALASEK, RT ;
SYLLAIOS, AJ .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (03) :656-659
[13]   BUILDUP OF ION-IMPLANTATION DAMAGE IN HG1-XCDXTE FOR VARIOUS X-VALUES [J].
UZANSAGUY, C ;
COMEDI, D ;
RICHTER, V ;
KALISH, R ;
TRIBOULET, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (04) :2575-2579