ION IRRADIATION ENHANCED CRYSTAL NUCLEATION IN AMORPHOUS SI THIN-FILMS

被引：39

作者：

IM, JS

ATWATER, HA

机构：

[1] Thomas J. Watson Sr. Laboratory of Applied Physics, California Institute of Technology, Pasadena

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 17期

关键词：

D O I：

10.1063/1.104061

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The nucleation kinetics of the amorphous-to-crystal transition of Si films under 1.5 MeV Xe+ irradiation have been investigated by means of in situ transmission electron microscopy in the temperature range T=500-580°C. After an incubation period during which negligible nucleation occurs, a constant nucleation rate was observed in steady state, suggesting that homogeneous nucleation occurred. Compared to thermal crystallization, a significant enhancement in the nucleation rate during high-energy ion irradiation (five to seven orders of magnitude) was observed with an apparent activation energy of 3.9±0.75 eV.

引用

页码：1766 / 1768

页数：3

共 15 条

[1]

Brown W. L., 1987, Microscopy of Semiconducting Materials, 1987. Proceedings of the Institute of Physics Conference, P61

[2]

CHRISTIAN JW, 1975, THEORY TRANSFORMATIO, pCH10

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