ALGAAS/GAAS MULTIQUANTUM WELL LASERS WITH BURIED MULTIQUANTUM WELL OPTICAL GUIDE

被引:9
作者
SEMURA, S
OHTA, T
KURODA, T
NAKASHIMA, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1985年 / 24卷 / 07期
关键词
D O I
10.1143/JJAP.24.L548
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
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页码:L548 / L550
页数:3
相关论文
共 14 条
[1]   CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS [J].
AIKI, K ;
NAKAMURA, M ;
KURODA, T ;
UMEDA, J .
APPLIED PHYSICS LETTERS, 1977, 30 (12) :649-651
[2]   INTRINSIC NOISE OF SEMICONDUCTOR-LASERS IN OPTICAL COMMUNICATION-SYSTEMS [J].
ARNOLD, G ;
PETERMANN, K .
OPTICAL AND QUANTUM ELECTRONICS, 1980, 12 (03) :207-219
[3]   LATERAL-MODE BEHAVIOR IN NARROW STRIPE LASERS [J].
ASBECK, PM ;
CAMMACK, DA ;
DANIELE, JJ ;
KLEBANOFF, V .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1979, 15 (08) :727-733
[4]   TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR QUANTUM-WELL ALXGA1-XAS-GAAS HETEROSTRUCTURE LASER-DIODES [J].
CHIN, R ;
HOLONYAK, N ;
VOJAK, BA ;
HESS, K ;
DUPUIS, RD ;
DAPKUS, PD .
APPLIED PHYSICS LETTERS, 1980, 36 (01) :19-21
[5]   NONLINEARITY IN POWER-OUTPUT-CURRENT CHARACTERISTICS OF STRIPE-GEOMETRY INJECTION-LASERS [J].
CHINONE, N .
JOURNAL OF APPLIED PHYSICS, 1977, 48 (08) :3237-3243
[6]  
EPWORTH RE, 1978, 4TH P EUR C OPT COMM, P492
[7]   GAALAS BURIED MULTIQUANTUM WELL LASERS FABRICATED BY DIFFUSION-INDUCED DISORDERING [J].
FUKUZAWA, T ;
SEMURA, S ;
SAITO, H ;
OHTA, T ;
UCHIDA, Y ;
NAKASHIMA, H .
APPLIED PHYSICS LETTERS, 1984, 45 (01) :1-3
[8]  
LAIDIG WD, 1981, APPL PHYS LETT, V38, P776, DOI 10.1063/1.92159
[9]   NOISE AND LONGITUDINAL MODE CHARACTERISTICS OF (GAAL)AS TS LASERS WITH REDUCED FACET REFLECTIVITIES [J].
SHIMIZU, H ;
ITOH, K ;
SUGINO, T ;
WADA, M ;
TERAMOTO, I .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1983, 19 (03) :470-474
[10]   REFRACTIVE-INDEX OF GAAS-ALAS SUPER-LATTICE GROWN BY MBE [J].
SUZUKI, Y ;
OKAMOTO, H .
JOURNAL OF ELECTRONIC MATERIALS, 1983, 12 (02) :397-411