DEVELOPMENTS IN METALORGANIC PRECURSORS FOR VAPOR-PHASE EPITAXY

被引：5

作者：

JONES, AC

机构：

[1] Epichem Limited, Wirral, Merseyside L62 3QF, Power Road, Bromborough

来源：

JOURNAL OF CRYSTAL GROWTH | 1994年 / 145卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(94)91099-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Metalorganic compounds are finding an increasing application in the growth of III-V and II-VI semiconductors by metalorganic vapour phase epitaxy (MOVPE) and chemical beam epitaxy (CBE). In this paper, developments in the control of precursor purity are reviewed, together with the use of alternative Al, Ga and Zn precursors in the growth of selected alloys by MOVPE and CBE.

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页码：505 / 511

页数：7

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