MICROSCOPIC OBSERVATION OF INTERFACE STRUCTURES OF YBACUO/MGO/YBACUO DOUBLE-HETEROEPITAXIAL THIN-FILMS BY TEM

被引：11

作者：

SAKUTA, K ^{[1
]}

IYORI, M ^{[1
]}

KOBAYASHI, T ^{[1
]}

MATSUI, M ^{[1
]}

NAKAJIMA, M ^{[1
]}

机构：

[1] FURUKAWA ELECT CORP LTD,YOKOHAMA RES & DEV LAB,NISHI KU,YOKOHAMA 220,JAPAN

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1991年 / 27卷 / 02期

关键词：

D O I：

10.1109/20.133436

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We have fabricated the YBaCuO/MgO/YBaCuO double-heterostructure(DHS) using conventional rf magnetron sputtering. The formation of (110)YBaCuO/(100)MgO/ (110)YBaCuO on (110)SrTiO3 substrate, and (001)YBaCuO/ (100)MgO/(100)YBaCuO and (001)YBaCuO/(100)MgO/(001) YBaCuO on (100)MgO substrate are demonstrated. According to the RHEED observations, each layer of the DHS was grown epitaxially. The cross sectional TEM observation of the (001)YBaCuO/(100)MgO(2nm)/(001) YBaCuO structure was carried out for characterizations of the heterostructure. The ultra-thin MgO layer grew island-shape. The MgO island formation was continuing and stimulated much more along with the top YBaCuO growth. The YBaCuO atomic arrange shape implied that the YBaCuO growth mechanism was the so-called atomic layer epitaxy.

引用

页码：1361 / 1364

页数：4

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