EFFECT OF DISCHARGE GAS-PRESSURE ON YBACUO EPITAXIAL FILM FORMATION BY REACTIVE RF MAGNETRON SPUTTERING

The in situ epitaxial growth of the YBaCuO film was carried out by the reactive magnetron sputtering under discharging gas pressures ranging from 4-120 Pa. It appeared that the pressure strongly affected not only the deviation of the film composition from the target but also the film crystallinity which is in turn closely correlated to the superconductivity and its stability. In the plasma emission spectra, we found a reduction in the Ar spectrum intensities relative to those of the metal components with increasing pressure. © 1990 IOP Publishing Ltd.