MONTE-CARLO SIMULATION OF HIGH-FIELD HOPPING ON A BOND-DISORDERED LATTICE

被引：4

作者：

GARTSTEIN, YN

JEYADEV, S

CONWELL, EM

机构：

[1] XEROX CORP,WEBSTER RES CTR,WEBSTER,NY 14580

[2] UKBEK ACAD SCI,DEPT THERMAL PHYS,TASHKENT 700135,UZBEKISTAN

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.51.4622

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The random walk of a charge carrier on a cubic lattice with binary bond disorder is simulated to study the drift velocity in high electric fields. The occurrence of negative differential conductivity is demonstrated. We have illustrated this with two possibilities of the carrier hopping rate: the Miller-Abrahams rate and the Marcus-Holstein-Emin (polaronic) rate. It is shown that the effective-medium and directed percolation approaches fail to correctly describe this phenomenon. The simulation results are consistent with the picture of field-created traps. © 1995 The American Physical Society.

引用

页码：4622 / 4625

页数：4

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