ANALYSIS OF THERMALLY STIMULATED CURRENT SPECTROSCOPY IN SEMIINSULATING GAAS .1. INITIALIZATION

[1] Bube R.H., 1960, PHOTOCONDUCTIVITY SO

[2] GUILLOT G, 1981, I PHYS C SER, V59, P323

[3] MEASUREMENTS OF THE NONRADIATIVE STATES OF OPTICALLY ILLUMINATED SEMICONDUCTORS BY A SUPERCONDUCTING TUNNEL JUNCTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 371 - 373

[4] BOUND-EXCITON-RELATED FINE-STRUCTURE IN CHARGE-TRANSFER SPECTRA OF INP-FE DETECTED BY CALORIMETRIC ABSORPTION-SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1292 - 1294

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[6] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882

[7] IRRADIATION-INDUCED DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20): : 3839 - 3871

[8] SZE SM, 1981, PHYSICS SEMICONDUCTO

[9] TOMOZANE M, 1986, JPN J APPL PHYS 2, V25, pL273, DOI 10.1143/JJAP.25.L273

[10] A SIMPLE METHOD TO DETERMINE THE CAPTURE CROSS-SECTION OF DEEP LEVELS IN GAAS BY THERMALLY STIMULATED CURRENT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04): : L283 - L284

[1] Bube R.H., 1960, PHOTOCONDUCTIVITY SO

[2] GUILLOT G, 1981, I PHYS C SER, V59, P323

[3] MEASUREMENTS OF THE NONRADIATIVE STATES OF OPTICALLY ILLUMINATED SEMICONDUCTORS BY A SUPERCONDUCTING TUNNEL JUNCTION [J]. APPLIED PHYSICS LETTERS, 1986, 49 (07) : 371 - 373

[4] BOUND-EXCITON-RELATED FINE-STRUCTURE IN CHARGE-TRANSFER SPECTRA OF INP-FE DETECTED BY CALORIMETRIC ABSORPTION-SPECTROSCOPY [J]. APPLIED PHYSICS LETTERS, 1987, 50 (18) : 1292 - 1294

[5] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) : 3023 - 3032

[6] IDENTIFICATION OF DEFECT STATE ASSOCIATED WITH A GALLIUM VACANCY IN GAAS AND ALXGA1-XAS [J]. PHYSICAL REVIEW B, 1977, 15 (10) : 4874 - 4882

[7] IRRADIATION-INDUCED DEFECTS IN GAAS [J]. JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1985, 18 (20): : 3839 - 3871

[8] SZE SM, 1981, PHYSICS SEMICONDUCTO

[9] TOMOZANE M, 1986, JPN J APPL PHYS 2, V25, pL273, DOI 10.1143/JJAP.25.L273

[10] A SIMPLE METHOD TO DETERMINE THE CAPTURE CROSS-SECTION OF DEEP LEVELS IN GAAS BY THERMALLY STIMULATED CURRENT [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (04): : L283 - L284