ENERGY-RESOLVED STUDY OF THE SPIN PRECESSION IN PHOTOEMISSION FROM ACTIVATED (110) GAAS

被引:9
作者
RIECHERT, H
DROUHIN, HJ
HERMANN, C
机构
[1] FORSCHUNGSZENTRUM JULICH, INST FESTKORPERFORSCH, D-5170 JULICH 1, FED REP GER
[2] ECOLE POLYTECH, PHYS MAT CONDENSEE LAB, F-91128 PALAISEAU, FRANCE
来源
PHYSICAL REVIEW B | 1988年 / 38卷 / 06期
关键词
D O I
10.1103/PhysRevB.38.4136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:4136 / 4155
页数:20
相关论文
共 37 条
  • [1] [Anonymous], 1966, SEMICONDUCTORS SEMIM
  • [2] Aronov A. G., 1983, Soviet Physics - JETP, V57, P680
  • [3] BELL, 1973, NEGATIVE ELECTRON AF
  • [4] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
    BLAKEMORE, JS
    [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
  • [5] EMISSION FROM (1,1,0) FACE OF NEGATIVE-ELECTRON AFFINITY GALLIUM-ARSENIDE
    BURT, MG
    INKSON, JC
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1976, 9 (01) : L5 - L7
  • [6] EMISSION OF X ELECTRONS FROM (110) GAAS ACTIVATED TO NEGATIVE ELECTRON AFFINITY
    BURT, MG
    INKSON, JC
    [J]. JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1975, 8 (01) : L3 - L5
  • [7] A COMPACT CYLINDRICAL MOTT ELECTRON POLARIMETER OPERATING WITH ACCELERATING VOLTAGE IN THE RANGE 20-100 KV
    CAMPBELL, DM
    HERMANN, C
    LAMPEL, G
    OWEN, R
    [J]. JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1985, 18 (08): : 664 - 672
  • [8] NONLOCAL PSEUDOPOTENTIAL CALCULATIONS FOR ELECTRONIC-STRUCTURE OF 11 DIAMOND AND ZINCBLENDE SEMICONDUCTORS
    CHELIKOWSKY, JR
    COHEN, ML
    [J]. PHYSICAL REVIEW B, 1976, 14 (02): : 556 - 582
  • [9] CHRISTENSEN NE, 1984, PHYS REV B, V30, P5753, DOI 10.1103/PhysRevB.30.5753
  • [10] SPLITTING OF THE CONDUCTION BANDS OF GAAS FOR K ALONG [110]
    CHRISTENSEN, NE
    CARDONA, M
    [J]. SOLID STATE COMMUNICATIONS, 1984, 51 (07) : 491 - 493