EMISSION OF X ELECTRONS FROM (110) GAAS ACTIVATED TO NEGATIVE ELECTRON AFFINITY

被引：6

作者：

BURT, MG ^{[1
]}

INKSON, JC ^{[1
]}

机构：

[1] UNIV CAMBRIDGE,CAVENDISH LAB,MADINGLEY RD,CAMBRIDGE,ENGLAND

来源：

关键词：

D O I：

10.1088/0022-3727/8/1/002

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L3 / L5

页数：3

共 5 条

[1] BELL RL, 1973, NEGATIVE ELECTRON AF
[2] HIGH-FIELD DISTRIBUTION FUNCTION IN GAAS
CONWELL, EM
VASSELL, MO
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 22 - +
[3] ELECTRONIC BAND STRUCTURE AND COVALENCY IN DIAMOND-TYPE SEMICONDUCTORS
HEINE, V
JONES, RO
[J]. JOURNAL OF PHYSICS PART C SOLID STATE PHYSICS, 1969, 2 (04): : 719 - &
[4] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS
JAMES, LW
MOLL, JL
[J]. PHYSICAL REVIEW, 1969, 183 (03): : 740 - &
[5] POLLARD JH, 1972, 8 ARM SCIENC C W POI