TELLURIUM DOPING AND IMPLANTATION OF ZINC-SULFIDE

被引:15
作者
ABDELKADER, A
BRYANT, FJ
HOGG, JHC
机构
来源
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE | 1984年 / 81卷 / 01期
关键词
D O I
10.1002/pssa.2210810137
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:333 / 342
页数:10
相关论文
共 18 条
[1]   FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].
ARGUELLO, CA ;
ROUSSEAU, DL ;
PORTO, SPS .
PHYSICAL REVIEW, 1969, 181 (03) :1351-&
[2]   ELECTROLUMINESCENCE IN TELLURIUM-DOPED CADMIUM SULPHIDE [J].
ATEN, AC ;
HAANSTRA, JH .
PHYSICS LETTERS, 1964, 11 (02) :97-98
[3]   EVALUATION OF NATURE OF RADIATIVE EMISSION PROCESSES FROM LATTICE DEFECT CENTERS IN CADMIUM TELLURIDE TOGETHER WITH THEIR ASSOCIATED QUENCHING MECHANISMS [J].
BRYANT, FJ ;
TOTTERDELL, DH ;
HAGSTON, WE .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1972, 14 (02) :579-590
[4]   FLUORESCENT DECAY TIMES OF EXCITONS BOUND TO ISOELECTRONIC TRAPS IN GAP AND ZNTE [J].
CUTHBERT, JD ;
THOMAS, DG .
PHYSICAL REVIEW, 1967, 154 (03) :763-&
[5]   OPTICAL PROPERTIES OF TELLURIUM AS AN ISOELECTRONIC TRAP IN CADMIUM SULFIDE [J].
CUTHBERT, JD ;
THOMAS, DG .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (03) :1573-&
[6]   ZEEMAN EFFECT AND CRYSTAL-FIELD SPLITTING OF EXCITONS BOUND TO ISOELECTRONIC BISMUTH IN GALLIUM PHOSPHIDE [J].
DEAN, PJ ;
FAULKNER, RA .
PHYSICAL REVIEW, 1969, 185 (03) :1064-&
[7]   LUMINESCENCE OF BOUND EXCITONS IN TELLURIUM-DOPED ZINC SULFIDE CRYSTALS [J].
FUKUSHIMA, T ;
SHIONOYA, S .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (04) :549-556
[8]   LUMINESCENCE EXCITATION-SPECTRA AND THEIR EXCITON STRUCTURES OF ZNS PHOSPHORS .2. AL-DOPED AND TE-DOPED PHOSPHORS [J].
HOSHINA, T ;
KAWAI, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (02) :279-287
[9]  
Iseler G. W., 1970, Journal of Luminescence, V3, P1, DOI 10.1016/0022-2313(70)90002-5
[10]   EXCITON STRUCTURES IN EXCITATION-SPECTRA OF IMPURITY EMISSION IN ZNS [J].
KAWAI, H ;
HOSHINA, T .
JOURNAL OF LUMINESCENCE, 1979, 18-9 (JAN) :293-296