CARRIER COLLECTION EFFICIENCY OF SCHOTTKY DIODES ON TRIODE DC SPUTTERED HYDROGENATED AMORPHOUS-SILICON - TRANSPORT-PROPERTIES OF HOLES

被引：4

作者：

ARENE, E ^{[1
]}

BAIXERAS, J ^{[1
]}

MENCARAGLIA, D ^{[1
]}

机构：

[1] UNIV PARIS 11,ECOLE SUPER ELECT,CNRS,LAB GENE ELECT PARIS 127,F-91190 GIF SUR YVETTE,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期

关键词：

D O I：

10.1063/1.333814

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2806 / 2811

页数：6

共 16 条

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[8] OBSERVATION OF 2 MODES OF CURRENT TRANSPORT THROUGH PHOSPHORUS-DOPED AMORPHOUS HYDROGENATED SILICON SCHOTTKY BARRIERS [J].

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[10] ELECTRON-HOLE RECOMBINATION IN REACTIVELY SPUTTERED AMORPHOUS-SILICON SOLAR-CELLS [J].

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