ELECTRONIC-STRUCTURE OF AMORPHOUS GE-F(H) ALLOYS

[1] BAL KA, 1985, J PHYS C

[2] BAL KA, 1984, PHYS REV B, V29, P6870

[3] BAL KA, 1985, PHYS REV B, V31, P5355

[4] BAL KA, 1981, PHYS REV LETT, V46, P774

[5] THE OPTICAL AND STRUCTURAL-PROPERTIES OF CVD GERMANIUM CARBIDE [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 1033 - 1036

[6] X-RAY PHOTOEMISSION CROSS-SECTION MODULATION IN DIAMOND, SILICON, GERMANIUM, METHANE, SILANE, AND GERMANE [J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5313 - 5316

[7] GHOSH BK, 1985, PHYS REV B

[8] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (03) : 155 - 158

[9] REALISTIC TIGHT-BINDING MODEL FOR CHEMISORPTION - H ON SI AND GE (III) [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1557 - 1570

[10] PAUL W, 1981, FUNDAMENTAL PHYSICS, P72

[1] BAL KA, 1985, J PHYS C

[2] BAL KA, 1984, PHYS REV B, V29, P6870

[3] BAL KA, 1985, PHYS REV B, V31, P5355

[4] BAL KA, 1981, PHYS REV LETT, V46, P774

[5] THE OPTICAL AND STRUCTURAL-PROPERTIES OF CVD GERMANIUM CARBIDE [J]. JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 1033 - 1036

[6] X-RAY PHOTOEMISSION CROSS-SECTION MODULATION IN DIAMOND, SILICON, GERMANIUM, METHANE, SILANE, AND GERMANE [J]. PHYSICAL REVIEW B, 1973, 7 (12) : 5313 - 5316

[7] GHOSH BK, 1985, PHYS REV B

[8] PREPARATION OF HIGHLY PHOTOCONDUCTIVE AMORPHOUS SILICON BY RF SPUTTERING [J]. SOLID STATE COMMUNICATIONS, 1977, 23 (03) : 155 - 158

[9] REALISTIC TIGHT-BINDING MODEL FOR CHEMISORPTION - H ON SI AND GE (III) [J]. PHYSICAL REVIEW B, 1976, 14 (04): : 1557 - 1570

[10] PAUL W, 1981, FUNDAMENTAL PHYSICS, P72