ELECTRON-BEAM IRRADIATION OF N-TYPE POROUS SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING

被引：16

作者：

MAURICE, JL ^{[1
]}

RIVIERE, A ^{[1
]}

ALAPINI, A ^{[1
]}

LEVYCLEMENT, C ^{[1
]}

机构：

[1] CNRS,PHYS SOLIDES BELLEVUE LAB,UPR 1332,F-92195 MEUDON,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 13期

关键词：

D O I：

10.1063/1.113886

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of electron beam irradiation on luminescence and microstructure of n-type porous silicon (PS) have been investigated, using cathodoluminescence (CL) in the scanning electron microscope (SEM), and electron energy loss spectroscopy in the transmission electron microscope (TEM). In the SEM, the CL rapidly decreased with irradiation. It could be fully restored by boiling the samples in de-ionized water. In the TEM, freshly restored PS emerged as Si nano-crystallites embedded in an unstable silicon oxide. The effect of irradiation was to suppress the oxide, and also, in the case of proximity of carbon from the foil holding the sample, to change the crystallite composition to β-SiC.© 1995 American Institute of Physics.

引用

页码：1665 / 1667

页数：3

共 14 条

[1] MORPHOLOGY OF POROUS N-TYPE SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING .2. STUDY OF THE TANGLED SI WIRES IN THE NANOPOROUS LAYER [J].

ALBUYARON, A ;

BASTIDE, S ;

MAURICE, JL ;

LEVYCLEMENT, C .

JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :67-71

[2] NANOSTRUCTURAL AND NANOCHEMICAL INVESTIGATION OF LUMINESCENT PHOTOELECTROCHEMICALLY ETCHED POROUS N-TYPE SILICON [J].

ALBUYARON, A ;

BASTIDE, S ;

BOUCHET, D ;

BRUN, N ;

COLLIEX, C ;

LEVYCLEMENT, C .

JOURNAL DE PHYSIQUE I, 1994, 4 (08) :1181-1197

[3]

BARSON PE, 1992, TRANSMISSION ELECTRO, P217

[4] PHOTOLUMINESCENCE OF OXIDIZED SILICON NANOCLUSTERS DEPOSITED ON THE BASAL-PLANE OF GRAPHITE [J].

DINH, LN ;

CHASE, LL ;

BALOOCH, M ;

TERMINELLO, LJ ;

WOOTEN, F .

APPLIED PHYSICS LETTERS, 1994, 65 (24) :3111-3113

[5] ROOM-TEMPERATURE PHOTOLUMINESCENCE OF PHOTOELECTROCHEMICALLY ETCHED N-TYPE SI [J].

GALUN, E ;

TENNE, R ;

LAGOUBI, A ;

LEVYCLEMENT, C .

JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :125-129

[6]

HOBBS LW, 1984, QUANTITATIVE ELECTRO, P399

[7]

IMHOFF D, COMMUNICATION

[8] AGING PHENOMENA OF LIGHT-EMITTING POROUS SILICON [J].

ITO, T ;

HIRAKI, A .

JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) :331-339

[9] MORPHOLOGY OF POROUS N-TYPE SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING .1. CORRELATIONS WITH MATERIAL AND ETCHING PARAMETERS [J].

LEVYCLEMENT, C ;

LAGOUBI, A ;

TOMKIEWICZ, M .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1994, 141 (04) :958-967

[10] POROUS N-SILICON PRODUCED BY PHOTOELECTROCHEMICAL ETCHING [J].

LEVYCLEMENT, C ;

LAGOUBI, A ;

BALLUTAUD, D ;

OZANAM, F ;

CHAZALVIEL, JN ;

NEUMANNSPALLART, M .

APPLIED SURFACE SCIENCE, 1993, 65-6 :408-414

← 1 2 →