MORPHOLOGY OF POROUS N-TYPE SILICON OBTAINED BY PHOTOELECTROCHEMICAL ETCHING .2. STUDY OF THE TANGLED SI WIRES IN THE NANOPOROUS LAYER

被引：19

作者：

ALBUYARON, A

BASTIDE, S

MAURICE, JL

LEVYCLEMENT, C

机构：

[1] LAB PHYS SOLIDES BELLEVUE,CNRS,UPR 1332,F-92195 MEUDON,FRANCE

[2] LAB PHYS MAT,CNRS,UPR 1341,F-92195 MEUDON,FRANCE

[3] ARO,VOLCANI CTR,IL-50250 BET DAGAN,ISRAEL

来源：

JOURNAL OF LUMINESCENCE | 1993年 / 57卷 / 1-6期

关键词：

D O I：

10.1016/0022-2313(93)90108-Y

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

Visible luminescence observed from the nanoporous layer of the two (1OO)-oriented low doped and highly doped PEC-etched n-type Si is explained as being due to the existence of single crystal silicon quantum wires within their structure. The nanometer-size tangled Si structure is contained and attached to a regular geometric Si macroarray. TEM studies also reveal subtle variations in morphology between the two layers studied, which could explain the blueshift in the spectrum of the low-doped specimen - thinner and more rigid irregular wires - as compared to the highly doped specimen.

引用

页码：67 / 71

页数：5

共 9 条

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