EPITAXIAL-GROWTH OF ZNSE ON SAPPHIRE SUBSTRATES

被引:11
作者
RATCHEVA, TM [1 ]
DRAGIEVA, ID [1 ]
机构
[1] HIGHER INST CHEM TECHNOL & MET,SOFIA,BULGARIA
来源
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 29卷 / 02期
关键词
D O I
10.1002/pssa.2210290228
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:579 / 585
页数:7
相关论文
共 22 条
[1]   EPITAXIAL GROWTH OF ZNSE ON GAAS [J].
BACZEWSK.A .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (06) :577-&
[2]   EPITAXIAL GROWTH OF ZINC SELENIDE ON GALLIUM ARSENIDE [J].
BOUGNOT, G ;
ETIENNE, D ;
CHEVRIER, J ;
BOHE, C .
MATERIALS RESEARCH BULLETIN, 1971, 6 (03) :145-&
[3]   HETEROEPITAXY OF ZNSE ON GAAS BY HYDROGEN TRANSPORT [J].
CHEVRIER, J ;
ETIENNE, D ;
CAMASSEL, J ;
AUVERGNE, D ;
PONS, JC ;
MATHIEU, H ;
BOUGNOT, G .
MATERIALS RESEARCH BULLETIN, 1972, 7 (12) :1485-1492
[4]  
GALLI G, 1966, J ELECTROCHEM SOC, V113, pC62
[5]   MASS SPECTROMETRIC AND KNUDSEN-CELL VAPORIZATION STUDIES OF GROUP 2B-6B COMPOUNDS [J].
GOLDFINGER, P ;
JEUNEHOMME, M .
TRANSACTIONS OF THE FARADAY SOCIETY, 1963, 59 (492) :2851-&
[6]  
HOWEL HJ, 1969, J ELECTROCHEM SOC, V116, P843
[7]  
Kamadjiev P. R., 1968, Comptes Rendus de l'Academie Bulgare des Sciences, V21, P1265
[8]  
Kelley K.K., 1960, US BUR MIN B
[9]  
Mach R., 1970, Physica Status Solidi A, V2, P701, DOI 10.1002/pssa.19700020405
[10]   USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .2. II-VI COMPOUNDS [J].
MANASEVIT, HM ;
SIMPSON, WI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :644-+