DISTRIBUTION OF THE MAIN ELECTRON TRAP EL2 IN UNDOPED LEC GAAS

被引：8

作者：

HASEGAWA, F

IWATA, N

YAMAMOTO, N

NANNICHI, Y

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 08期

关键词：

D O I：

10.1143/JJAP.22.L502

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L502 / L504

页数：3

共 11 条

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[3]

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[4]

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[7]

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[8] EFFECTS OF STOICHIOMETRY ON THERMAL-STABILITY OF UNDOPED, SEMI-INSULATING GAAS [J].

TA, LB ;

HOBGOOD, HM ;

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THOMAS, RN .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5771-5775

[9] CHARACTERIZATION OF NONUNIFORMITY IN SEMI-INSULATING LEC GAAS BY PHOTO-LUMINESCENCE SPECTROSCOPY [J].

TAJIMA, M .

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[10]

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