INFLUENCE OF SUBSTRATE MISORIENTATION ON DEFECT AND IMPURITY INCORPORATION IN GAAS/ALGAAS HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：26

作者：

RADULESCU, DC

WICKS, GW

SCHAFF, WJ

CALAWA, AR

EASTMAN, LF

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1988年 / 63卷 / 10期

关键词：

D O I：

10.1063/1.340412

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：5115 / 5120

页数：6

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