DEFECT-RELATED EMISSIONS IN PHOTOLUMINESCENCE SPECTRA OF ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：25

作者：

MIHARA, M

NOMURA, Y

MANNOH, M

YAMANAKA, K

NARITSUKA, S

SHINOZAKI, K

YUASA, T

ISHII, M

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 10期

关键词：

D O I：

10.1063/1.332931

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3765 / 3768

页数：4

共 31 条

[1] PHOTO-LUMINESCENCE OF SHALLOW ACCEPTORS IN AL0.28GA0.72AS [J].

BALLINGALL, JM ;

COLLINS, DM .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (01) :341-345

[2] IMPURITY AND DEFECT LEVELS IN BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BHATTACHARYA, PK ;

BUHLMANN, HJ ;

ILEGEMS, M ;

STAEHLI, JL .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) :6391-6398

[3]

Bimberg D., 1970, Journal of Luminescence, V3, P175, DOI 10.1016/0022-2313(71)90055-X

[4] LOW-TEMPERATURE PHOTO-LUMINESCENCE OF LIGHTLY SI-DOPED AND UNDOPED MBE GAAS [J].

BRIONES, F ;

COLLINS, DM .

JOURNAL OF ELECTRONIC MATERIALS, 1982, 11 (04) :847-866

[5] EFFECT OF H-2 ON RESIDUAL IMPURITIES IN GAAS MBE LAYERS [J].

CALAWA, AR .

APPLIED PHYSICS LETTERS, 1978, 33 (12) :1020-1022

[6]

CHANG LL, 1975, EPITAXIAL GROWTH A, P37

[7] AN OPTICAL CHARACTERIZATION OF DEFECT LEVELS INDUCED BY MBE GROWTH OF GAAS [J].

CONTOUR, JP ;

NEU, G ;

LEROUX, M ;

CHAIX, C ;

LEVESQUE, B ;

ETIENNE, P .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1983, 1 (03) :811-815

[8] THE OCCURRENCE OF SHARP EXCITON-LIKE FEATURES IN LOW-TEMPERATURE PHOTO-LUMINESCENCE SPECTRA FROM MBE GROWN GAAS [J].

DOBSON, PJ ;

SCOTT, GB ;

NEAVE, JH ;

JOYCE, BA .

SOLID STATE COMMUNICATIONS, 1982, 43 (12) :917-919

[9] OBSERVATIONS ON BAYARD-ALPERT ION GAUGE SENSITIVITIES TO VARIOUS GASES [J].

FLAIM, TA ;

OWNBY, PD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1971, 8 (05) :661-&

[10]

GROSS EF, 1967, SOV PHYS SEMICOND+, V1, P241

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