PERFORMANCE OF HETEROSTRUCTURE FETS IN LSI

被引：16

作者：

TIWARI, S

机构：

来源：

关键词：

D O I：

10.1109/T-ED.1986.22532

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：554 / 563

页数：10

共 24 条

[1] Abe M., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P158
[2] BIAS DEPENDENCE OF CAPACITANCES IN MODULATION-DOPED FETS AT 4 GHZ
ARNOLD, D
KOPP, W
FISCHER, R
KLEM, J
MORKOC, H
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (04) : 123 - 125
[3] CIRILLO NC, 1985, JUN P DEV RES C BOUL
[4] Engelmann R. W. H., 1976, International Electron Devices Meeting. (Technical digest), P351
[5] BIAS DEPENDENCE OF GAAS AND INP MESFET PARAMETERS
ENGELMANN, RWH
LIECHTI, CA
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1977, 24 (11) : 1288 - 1296
[6] Hendel R. L., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P857
[7] MODEL AND PERFORMANCE OF HOT-ELECTRON MOS-TRANSISTORS FOR VLSI
HOEFFLINGER, B
SIBBERT, H
ZIMMER, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (04) : 513 - 520
[8] OUTPUT CHARACTERISTICS OF SHORT-CHANNEL FIELD-EFFECT TRANSISTORS
HOEFFLINGER, B
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (08) : 971 - 976
[9] HYUN CH, 1985 IEEE CORN C HIG
[10] COMPLEMENTARY P-MODFET AND N-HB MESFET (AL,GA)AS TRANSISTORS
KIEHL, RA
GOSSARD, AC
[J]. IEEE ELECTRON DEVICE LETTERS, 1984, 5 (12) : 521 - 523